Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics

Abstract Flourite-structure ferroelectrics (FEs) and antiferroelectrics (AFEs) such as HfO 2 its variants have gained copious attention from the semiconductor community, because they enable complementary metal-oxide-semiconductor (CMOS)-compatible platforms for high-density, high-performance non-volatile volatile memory technologies. While many individual experiments been conducted to characterize understand fluorite-structure FEs AFEs, there has little effort aggregate information needed benchmark provide insights into their properties. We present a fast robust modeling framework that automatically fits Preisach model experimental polarization ( $$Q_{FE}$$ Q FE ) versus electric field $$E_{FE}$$ E hysteresis characterizations of FEs. The modifications original allow double loops in be captured well. By fitting measured data reported literature, we observe ferroelectric dielectric constant decrease coercive rises general.